Method and device to reduce leakage and dynamic energy consumption in high-speed memories

ABSTRACT

A microcomputer comprising a microprocessor unit and a first memory unit is disclosed. In one aspect, the microprocessor unit comprises at least one functional unit and at least one register. Further, the at least one register is a wide register comprising a plurality of second memory units which are capable to each contain one word, the wide register being adapted so that the second memory units are simultaneously accessible by the first memory unit, and at least part of the second memory units are separately accessible by the at least one functional unit. Further, the first memory unit is an embedded non-volatile memory unit.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of PCT Application No.PCT/EP2012/064349, filed Jul. 20, 2012, which claims priority under 35U.S.C. § 119(e) to U.S. Provisional Patent Application No. 61/511,946,filed Jul. 26, 2011. Each of the above applications is herebyincorporated by reference in its entirety.

BACKGROUND

1. Technological Field

The present invention is related to techniques to deploy memorytechnologies in processor architectures to reduce leakage and dynamicenergy consumption. More specifically, the present invention relates tothe use of non-volatile memories in processor architectures to reducethe total leakage and dynamic energy, while meeting stringentperformance requirements.

2. Description of the Related Technology

Modern processor architectures nowadays have at least two caches and alocal memory (e.g. scratch pad memory): an instruction cache to speed upexecutable instruction fetch, a data cache to speed up data fetch andstore, and optionally a translation lookaside buffer (TLB) used to speedup virtual-to-physical address translation for both executableinstructions and data. Data cache is usually organized as a hierarchy ofmore cache levels (L1, L2, etc.).

L1 data memory (L1D) in today's processors is based on SRAMs and theseare (too) energy-inefficient, both from a dynamic and leakage energyperspective. For register-based implementations the challenge is evenbigger. Especially the active leakage contribution is an issue becausestandby leakage can be largely mitigated by recent state-of-the-arttechniques (‘localized’ soft or hard power gating approaches arepromising solutions for the future). The L1D layer has to supply data atthe processor clock speed (or maximally 2× slower), being for examplearound 1 ns. This is true both for read and write operations. Moreover,sensitivity to substrate (e.g. silicon) area is still present, eventhough the memory sizes are quite limited. Due to the inefficiency ofSRAMs, a further area reduction would be welcome.

Until today, all industrial and practically realizable compute platformshave used SRAMs or register-based LID memories. A feasible non-volatilememory solution from an integratedtechnology-circuit-architecture-mapping point of view where SRAM isavoided for all vector data read and write operations, has not beenpublished. Academic work has focused on a partial replacement of SRAMonly, as summarized below.

Jingtong Hu, et al. provide in “Towards Energy Efficient Hybrid On-chipScratch Pad Memory with Non-Volatile Memory” (DATE conference 2011) asolution to the leakage energy consumption problems in scratch padmemories. In this publication, a novel hybrid scratch pad memory isproposed which consists of both non-volatile memories and SRAM. Thissolution takes advantage of the low leakage power and the high densityof non-volatile memories and the energy efficient writes of SRAM. Apartfrom that, an optimal dynamic data management algorithm is proposed torealize the full potential of both the SRAM and the non-volatilememories.

In the above-mentioned document by J. Hu a technique is provided toreduce the leakage energy consumption in memories. However, they do notprovide a solution whereby all SRAM memory accesses for vector data(i.e. all memory accesses which are nested loop related) can be replacedby non-volatile memories to remove the energy leaking problem of SRAM.This solution requires area as a combination of SRAM and non-volatilememory (NVM). Until today, instruction background memory at theintermediate storage level (L1I) is always selected as SRAM as the speedof NVM is not sufficient. Only for the program memory (off-chip)typically a flash device is selected.

A particularly interesting application field wherein the above-mentionedissues are relevant, relates to low power embedded systems forwireless/multimedia target applications. Embedded memories have beenincreasingly dominating System on Chip (SoC) designs in terms of chiparea, performance, power consumption, and manufacturing yield. In manyof the commercially available embedded systems today, the InstructionsMemory Organization (IMO) consists of two levels: L1I and L0I. The L1Imemory is comparatively larger than the L0I (about 8 to 16 times) andthe L0I is closer to the data-path. The L0I is commonly implemented as aloop buffer/loop cache, as embedded instruction memories for low powerwireless or multimedia applications typically have loop dominated codes.

When envisaging wireless/multimedia target applications, the use ofCoarse Grained Reconfigurable Architectures (CGRAs) is appealing. CGRAsexploit the data flow dominance and offer more parallel resources. Thesearchitectures usually include a general purpose processor (either RISCbased or VLIW) along with a reconfigurable array of cells which speedsup data flow based computations significantly. Programming the cellmatrix requires specific memory organizations that efficiently enforcecompiler decisions for every cell. This usually implies reading/writingvery wide words from memory.

The paper ‘Energy Efficient Many-core Processor for Recognition andMining using Spin-based Memory’ (R. Venkatesan et al., IEEE Int'l Symp.on Nanoscale Architectures, June 2011, pp. 122-128) describes a specificprocessor that has cache-memory completely consisting of non-volatilememory. The use of Spin Transfer Torque Magnetic RAM (STT-MRAM) isproposed for one of the L2 layer levels and Domain Wall Memory (DWM), astreaming access memory, for the L1 cache level. This memory requiresadditional shift operations to enable sharing of the read and writeports to multiple domains. However, for wireless/multimediaapplications, such memory organization is not efficient.

In ‘Relaxing Non-Volatility for Fast and Energy-Efficient STT-RAMCaches’ (Smullen et al, IEEE Int'l Symp. on HPCA, February 2011, pp.50-61) a design is described using only non-volatile memory (NVM) forcache memory. The NVM is STT-RAM. For optimal performance the propertiesof the STT-RAM are tuned, especially by relaxing the non-volatility. Arefresh policy might be needed to hold the non-volatility. Forwireless/multimedia applications such a refresh policy would however bedetrimental.

The paper ‘Resistive Computation: Avoiding the Power Wall withLow-Leakage, STT-MRAM Based Computing’ (Xiaochen Guo et al.) presents aprocessor architecture in which most of the functionality is migratedfrom CMOS to STT-MRAM. Among others the L1I cache and the L1D cache arereplaced by STT-MRAM. The authors claim there are no write enduranceproblems with STT-MRAM: for the SRAM replacement the write latency isassumed to be mitigated by a pure hardware based solution requiringextra read and compare operations whenever a write happens. Such latencyis not allowable for the applications envisaged in the presentinvention.

U.S. Patent Publication No. US2010/0095057 discloses a non-volatileresistive sense memory on-chip cache. However, the document onlydescribes the use of such memory for. L2 or L3 cache. The L1 cachememory is not replaced by non-volatile memory.

The issues of leakage and dynamic energy consumption are for example ofparticular importance in energy-sensitive applications with a highperformance requirement (necessitating high clock speeds, e.g. around 1GHz, in combination with so-called data-parallel processor solutions)and that are cost sensitive (area overhead is relevant). Also,application behavior determines data leakage in SRAM. The leakage isdependent on the 0-1 sequence of the data and especially on how long thedata needs to remain available. E.g. some data need to be kept only verytemporarily and the SRAM partitions that contain such data can then bepowered down for part of the time to reduce the leakage.

Hence, there is a need for improving local (embedded) data andinstruction memory structures with respect to energy leakage where atthe same time also the dynamic energy consumption remains limited or ispreferably even further reduced.

SUMMARY OF CERTAIN INVENTIVE ASPECTS

It is an object of embodiments of the present invention to provide atechnique for reducing the total dynamic and leakage energy (standby andactive leakage) problems in L1D and L1I/L0I memories, whereby the use ofleakage-prone components such as the SRAM is no longer needed fordominated loop nests including all vector data accesses.

The above objective is accomplished by a method and device according toembodiments of the present invention.

In an aspect the invention relates in particular to a microcomputerarchitecture comprising a microprocessor unit and a first memory unit.The microprocessor unit comprises at least one functional unit and atleast one register. The at least one register is a wide registercomprising a plurality of second memory units, which are capable to eachcontain one word, the wide register being adapted so that the secondmemory units are simultaneously accessible by the first memory unit, andat least part of the second memory units are separately accessible bythe at least one functional unit. The microcomputer is characterized bythe first memory unit being an embedded non-volatile memory unit.

The first memory unit can be in certain embodiments a L1 data memory andin other embodiments an L1 instruction memory or an L1 configurationmemory. Although the invention is described with respect to thesevarious types of L1 memory, it is to be noted that a skilled person willappreciate that the same principles can readily be applied to L2 memory.

The leakage of the first memory unit (e.g. a L1D cache or any of thealternatives mentioned above) is reduced by using an embeddednon-volatile memory (e.g. ReRAM or other type) as a scratch pad memory.Further, the register (very wide register) has asymmetric interface,i.e. the interface to the first memory unit is wider with respect to theinterface to the functional units. Thus, multiple words can besimultaneously read from/written to the first memory unit and theregisters, while each functional unit can read/write separately to theregisters.

In a preferred embodiment the first memory unit is a L1 data memory,whereby the at least one wide register and the at least one functionalunit are linked to a data bus internal to the microprocessor unit.

In another preferred embodiment the first memory unit is an L1instruction memory. The microcomputer then preferably further comprisesa loop buffer (L0 unit) between the L1 instruction memory and the atleast one functional unit, said loop buffer being either a standardmemory implementation or an embedded non-volatile memory unit. In thelatter case, both the first memory unit and the loop buffer are thenwide access non-volatile memories. The first memory unit has a largerline size (L1 line size) than the loop buffer (L0 line size).

In an advantageous embodiment the microcomputer with L1 instructionmemory comprises a loop buffer being an embedded non-volatile memoryunit and a multiplexing means arranged for deciding on which memory unitto access for transferring the instruction or configuration to thefunctional unit and whether to potentially bypass the loop buffer.

The microcomputer preferably comprises a single line register betweenthe wide register and the loop buffer. This small line register isintroduced to deal with the substantial energy consumption increase dueto the addition of an extra port for reading from the wide register.This more energy efficient solution comes at the price of someadditional hardware.

Advantageously, the microcomputer according to the invention comprises afurther wide register adapted for exploiting access from the loop buffertowards the functional unit. This smaller wide register (e.g. a VWR)extracts a single instruction from the L0 line size and exploits themostly regular access from the L0 loop buffer. This further reduces theenergy consumption.

In another preferred embodiment the first memory unit is an L1configuration memory.

Advantageously, the microcomputer then further comprises a loop bufferimplemented as an embedded non-volatile memory unit. Both the firstmemory unit and the loop buffer are then wide access non-volatilememories. The first memory unit has a larger line size (L1 line size)than the loop buffer (L0 line size). The wide register then preferablycomprises a multiplexer means arranged for deciding on which memory unitto access for transferring the instruction or configuration to thefunctional unit and whether to potentially bypass the loop buffer.

In a preferred embodiment the microcomputer comprises a bypass from theL1 configuration memory to the loop buffer. This bypass reduces the needfor updating the wide register frequently and reduces the number of readaccesses to the configuration memory. In another embodiment themicrocomputer comprises a further wide register adapted for exploitingaccess from the loop buffer towards the functional unit. Due to the lowenergy read access of the wide register and the beneficial read accessenergy of the embedded wide word non-volatile memory (as compared toSRAM), this is a very attractive solution.

In preferred embodiments of the invention the first memory unit in themicrocomputer has a divided bit line architecture with non-complementarybit lines. Such an architecture yields several advantages, like a moredominant periphery area due to the smaller cell area and a lowerrequired voltage for the bit line precharging for a read operation.

Advantageously, the first memory unit comprises a sense amplifierconnected to a first bit line and arranged for providing an amplifiedvoltage swing from the first bit line to a second bit line, said secondbit line connected to the plurality of second memory units. The presenceof a sense amplifier contributes, in the event of a read operation, toachieving a low voltage swing.

In a preferred embodiment the first memory unit is a resistive RAM typememory or a spin transfer torque RAM type. Such materials displaycertain properties, such as low-power switching, potential for scaling,non-volatile nature, etc., and offer the possibility of very highdensity integration. In a more specific embodiment the first memory unitis resistive RAM type memory with one resistor and two transistors, sothat a larger current is obtained during a set from a high memory cellresistivity state to low memory cell resistivity state, resulting in afaster read operation.

In certain embodiments the first memory unit is a hybrid memorystructure, further comprising a SRAM memory for use in scalar operationsand accesses.

In another aspect the invention relates to a compiler for convertingapplication code into execution code adapted for execution on amicrocomputer as previously described, said compiler comprising

-   -   means for receiving application code, the application code        including memory access operations,    -   means for converting the application code such that the memory        access operations are translated into irregular and regular        memory operations

(a) read operations comprising simultaneously reading of a plurality ofwords from the first memory unit and simultaneously writing theplurality of words into the register,

(b) write operations comprising simultaneously reading a plurality ofwords from the register and simultaneously writing the plurality ofwords into the first memory unit, whereby a reorganized mapping of thearray indices for the regular and irregular memory accesses towards readoperations and write operations is performed, whereby the irregularindexing operations are dominating in the read operations and theregular indexing operations are dominating in the write operations.

Advantageously, the compiler further comprises means to perform a dataflow transformation to move irregularly indexed write operations to aread operation.

In a further aspect the invention relates to a method for convertingapplication code into execution code adapted for execution on amicrocomputer as described above. The method comprises the steps of:

-   -   obtaining application code, the application code comprising        memory access operations, said memory access operations        comprising read operations and write operations,    -   converting at least a part of the application code, such that        the memory access operations are translated into irregular and        regular memory operations, whereby the read operations comprise        simultaneously reading of a plurality of words from the first        memory unit and simultaneously writing the plurality of words        into the at least one register and the write operations comprise        simultaneously reading a plurality of words from the at least        one register and simultaneously writing the plurality of words        into the first memory unit,    -   reorganizing the mapping of the array indices for the regular        and irregular memory accesses towards read operations and write        operations whereby the irregular indexing operations are        dominating in the read operations and the regular indexing        operations are dominating in the write operations.

In a preferred embodiment the level of domination of the read and writeoperations, respectively, is determined by comparing the performance ofmicrocomputer as previously described with the performance of a systemwherein the non-volatile memory unit is replaced by SRAM memory.

Advantageously, the method further comprises a step of performing a dataflow transformation to move irregularly indexed write operations toregular read operations.

When more than one read operation corresponds to a single writeoperation, the method preferably comprises a step of changing ortransforming the sequences of read and write access operations for eachpair of read/write operations.

In a further embodiment multiple write accesses that only partially usethe width of said wide register, are merged.

For purposes of summarizing the invention and the advantages achievedover the prior art, certain objects and advantages of the invention havebeen described herein above. Of course, it is to be understood that notnecessarily all such objects or advantages may be achieved in accordancewith any particular embodiment of the invention. Thus, for example,those skilled in the art will recognize that the invention may beembodied or carried out in a manner that achieves or optimizes oneadvantage or group of advantages as taught herein without necessarilyachieving other objects or advantages as may be taught or suggestedherein.

The above and other aspects of the invention will be apparent from andelucidated with reference to the embodiment(s) described hereinafter.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will now be described further, by way of example, withreference to the accompanying drawings, wherein like reference numeralsrefer to like elements in the various figures, and in which:

FIG. 1 illustrates a prior art microcomputer architecture with anSRAM-based wide scratch pad memory.

FIG. 2 illustrates a microcomputer architecture with a ReRAM-based widescratch pad memory, according to embodiments of the present invention.

FIG. 3 illustrates a divided bit line architecture in accordance withembodiments of the present invention.

FIG. 4 illustrates the divided bit line architecture with a single bitline and additional PMOS transistor in parallel for write operations.

FIG. 5 illustrates the use of loop buffers for instruction memory, inaccordance with embodiments of the present invention.

FIG. 6 illustrates a very wide register organization with asymmetricinterfaces.

FIG. 7 illustrates a modified hybrid instruction memory architecture.

FIG. 8 illustrates a breakdown of an optimized instruction flow.

FIG. 9 illustrates a modified instruction memory organization with L0line register.

FIG. 10 illustrates an energy and performance optimized instructionmemory organization.

FIG. 11 represents a wide word access ReRAM structure.

FIG. 12 represents a conventional configuration memory organization.

FIG. 13 represents a very wide memory organization with asymmetricinterfaces.

FIG. 14 represents an embodiment of a ReRAM based configuration memoryorganization.

FIG. 15 represents an embodiment of a configuration memory organizationwith a bypass to loop buffer.

FIG. 16 represents an embodiment of a configuration memory organizationwith multiple VWRs.

The drawings are only schematic and are non-limiting. In the drawings,the size of some of the elements may be exaggerated and not drawn onscale for illustrative purposes. The dimensions and the relativedimensions do not necessarily correspond to actual reductions topractice of the invention. Any reference signs in the claims shall notbe construed as limiting the scope. In the different drawings, the samereference signs refer to the same or analogous elements.

DETAILED DESCRIPTION

The present invention will be described with respect to particularembodiments and with reference to certain drawings but the invention isnot limited thereto but only by the claims.

Furthermore, the terms first, second and the like in the description andin the claims, are used for distinguishing between similar elements andnot necessarily for describing a sequence, either temporally, spatially,in ranking or in any other manner. It is to be understood that the termsso used are interchangeable under appropriate circumstances and that theembodiments of the invention described herein are capable of operationin other sequences than described or illustrated herein.

It is to be noticed that the term “comprising,” used in the claims,should not be interpreted as being restricted to the means listedthereafter; it does not exclude other elements or steps. It is thus tobe interpreted as specifying the presence of the stated features,integers, steps or components as referred to, but does not preclude thepresence or addition of one or more other features, integers, steps orcomponents, or groups thereof. Thus, the scope of the expression “adevice comprising means A and B” should not be limited to devicesconsisting only of components A and B. It means that with respect to thepresent invention, the only relevant components of the device are A andB.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment of the present invention. Thus, appearances of the phrases“in one embodiment” or “in an embodiment” in various places throughoutthis specification are not necessarily all referring to the sameembodiment, but may. Furthermore, the particular features, structures orcharacteristics may be combined in any suitable manner, as would beapparent to one of ordinary skill in the art from this disclosure, inone or more embodiments.

Similarly it should be appreciated that in the description of exemplaryembodiments of the invention, various features of the invention aresometimes grouped together in a single embodiment, figure, ordescription thereof for the purpose of streamlining the disclosure andaiding in the understanding of one or more of the various inventiveaspects. This method of disclosure, however, is not to be interpreted asreflecting an intention that the claimed invention requires morefeatures than are expressly recited in each claim. Rather, as thefollowing claims reflect, inventive aspects lie in less than allfeatures of a single foregoing disclosed embodiment. Thus, the claimsfollowing the detailed description are hereby expressly incorporatedinto this detailed description, with each claim standing on its own as aseparate embodiment of this invention.

Furthermore, while some embodiments described herein include some butnot other features included in other embodiments, combinations offeatures of different embodiments are meant to be within the scope ofthe invention, and form different embodiments, as would be understood bythose in the art. For example, in the following claims, any of theclaimed embodiments can be used in any combination.

It should be noted that the use of particular terminology whendescribing certain features or aspects of the invention should not betaken to imply that the terminology is being re-defined herein to berestricted to include any specific characteristics of the features oraspects of the invention with which that terminology is associated.

In the description provided herein, numerous specific details are setforth. However, it is understood that embodiments of the invention maybe practiced without these specific details. In other instances,well-known methods, structures and techniques have not been shown indetail in order not to obscure an understanding of this description.

The low energy read access of the ReRAM and the read/write asymmetry dueto the loop dominated nature of the codes makes the usage of ReRAMalternatives highly preferable for embedded systems running thewireless/multimedia target applications. Apart from the obviousadvantages of lower leakage and area, the compatibility of ReRAM withlogic technology also makes it suitable to replace SRAM at such lowlevels (L0). Thus the L1 and L0 loop buffer are substituted by ReRAMmemories.

A set of typical system-level requirements for the ReRAM when used in anembedded wireless or multimedia application, include read access speedsbelow 1 ns, while write access speeds can tolerate a larger latency butnot more than 2 cycles in L1 and 8 cycles in L2 normally. Energy perread/write access should be reduced as much as possible because of theportable context, preferably in the same range as the foreground memoryaccess, so around 100 fJ/read word. Writing occurs less frequently so itcan be more expensive. Area should remain low but due to the limitedsizes (16-128 Kb for L1 and 128 Kb-8 Mb for L2) the cell area can be abit relaxed compared to standalone contexts. Endurance should be high,preferably 10¹³ or higher for read access, but retention in the L1-L2layers can be relaxed to a few days or even hours. The limited amount ofdata to be stored longer can easily be back upped in an off-chip NVMwith long retention.

64 kb 64 kb 128 kb ReRAM ReRAM SRAM 32 bit access 512 bit access 32 bitaccess (32 nm) (32 nm) (90 nm) {main/wordline} (1.0/1.0) V (1.0/1.0) V(1.0/1.2) V V_(dd) (V) Read energy/access/ 23.01 fJ 4.30 fJ 146.3 fJ bit

The read access energies for a 64 kb ReRAM design as proposed inembodiments of the invention are now compared with a 32 bit access 128kb SRAM as illustrated in the paper “A 3.6 pJ/Access 480 MHz, 128 kbOn-Chip SRAM With 850 MHz Boost Mode in 90 nm CMOS With Tunable SenseAmplifiers” (S. Cosemans et al., IEEE Journal of Solid-State Circuits,Vol. 44, 2009). The latter has been used as the base for building theReRAM periphery so it is a fair comparison. The energy/access/bit isclearly the most efficient for the 512 bit access ReRAM at around 4.3fJ, while it is around 230 for the 32 bit access ReRAM and around 146 fJin the 32 bit access SRAM. Note though that the SRAM energy isconsidered at the 90 nm node so it has to be scaled back to 32 nm. Anoverly optimistic estimate would then assume a reduction squared to thetechnology scaling factor lambda but in these deep-submicron nodes it ismore realistic to use a factor 3 to 5. That still puts the ReRAM in avery favorable position given the high leakage energy contributiontypically related to the SRAM technology. Note also that a number ofdifferences are present in the environmental variables like word lineV_(dd), timing pulse etc.

The dynamic read energy/bit is 4 fJ for a 32 nm technology node, with atypical L1D size of 32 kb. Also for larger L1D sizes the speed andenergy efficiency are maintained. Above 1 Mb more cycles would be neededhowever for these memory sizes, L2 memory is considered where morelatency is acceptable. The active leakage is heavily reduced compared toan SRAM because the ReRAM cell does not leak and the periphery is keptminimal compared to an SRAM. This is a very acceptable total energy,even if read operations are performed often. To compare regardingenergy, a multiplication in the processor data path namely requires thesame order of magnitude in 32 nm.

Also the read access times (see table) of the proposed ReRAM models arecomparable to those of commercial/pre-production SRAMs. These resultsshow the overall system requirements (mentioned above) are met so thewide word access ReRAM can potentially be used for embedded L1 (alongwith SRAM for the scalar access mode) using the data parallel foregroundmemory data registers, e.g. VWR, based processor architecture interfacethat has been proposed in “Ultra-low power domain-specificinstruction-set processors” (chapter 8, F. Catthoor et al., ISBN978-90-481-9527-5, Springer, June 2010).

RAM SRAM Read Time (ns) <0.3 ns   <0.3 ns Write/Erase Time (ns) <0.3 ns(10-5) ns

In FIG. 1 a prior art data-parallel processor architecture 10 ispresented with focus on the L1D wide scratch pad 11 (or cache) coupledto a (very) wide L0 foreground memory 12 with asymmetric interfaces(wide to the L1D 11 and medium/narrow to the processor data path 13).Typical bit width sizes for the L1D 11 and wide L0 interface 14 are 128to 2048 bit, but these are not absolute bounds (they can changedepending on further technology evolution e.g.). Also non power of 2sizes have been used as instances such as for example 960 or 576 bit. Avery energy-efficient solution for this wide L0 foreground memory 12 isthe Very Wide Register (VWR) as described in patent document U.S. Pat.No. 7,694,084, which is hereby incorporated by reference in itsentirety. This VWR features an asymmetric interface.

As opposed to the prior art situation illustrated in FIG. 1, the presentinvention discloses in certain embodiments a microprocessor architecturewherein SRAMs, more particularly SRAMs forming the level-1 cache, arereplaced with an embedded non-volatile memory (ENVM) (e.g. Resistive RAM(ReRAM) or another type of non-volatile memory for which the readoperation is fast enough (1-2 processor cycles, e.g. 1 ns) and which hasan acceptable energy per access (acceptable means the dynamic energybeing lower than that of SRAM) with a non-uniform access scheme. It isto be noted that conventional NVMs like stand-alone ReRAM or phasechange memory (PCRAM) are not applicable in this context. An interestingalternative is e.g. STT-RAM (magnetic spin torque RAM). ReRAM materialsdisplay certain properties, such as low-power switching, potential forscaling, non-volatile nature, etc. These materials offer the possibilityof very high density integration and are believed to be free from theinherent scaling problem of capacitance-based RAMs such as dynamic RAM(DRAM), floating body and ferroelectric RAM.

Replacing the SRAMs by ENVMs, in particular for example by ReRAMs,yields the advantage that leakage energy is severely reduced both instandby and active mode, but also the dynamic energy itself is furtherreduced because of the small cell size (which decreases the capacity)and the use of wide read access parts. In FIG. 2 one embodiment of amicroprocessor architecture 20 according to embodiments of the presentinvention is illustrated, in which no SRAM wide scratch pad memory 11 isprovided, but rather a ReRAM wide scratch pad memory 21. An advantage ofembodiments of the present invention is the removal of the energyleakage problem in traditional SRAM solutions by substituting it with anENVM memory, e.g. a ReRAM memory.

The microcomputer architecture 20 according to embodiments of thepresent invention further comprises a foreground memory 22 and a datapath 23. The data path 23 comprises at least one functional unit 24 forperforming operations on data fetched from the foreground memory 22 andoptionally a shuffler 25 for rearranging data subwords applied to oremanating from the functional units 24. The foreground memory 22provides the data access for the functional units 24 to accomplish theintended functions from a program being executed. The foreground memory22 has asymmetric interfaces (wide to the L1D 21 and medium/narrow tothe processor data path 23, hence wider to the scratch pad memory 21than to the data path 23). The foreground memory 22 may for examplecomprise or consist of one or more very wide registers (VWR). The one ormore data registers of the foreground memory 22 have a width larger thanthe word length used for the functional units 24 of the architecture,e.g. the one or more registers of the foreground memory 22 may be aswide as the line size of the external memory 26. The registers of theforeground memory 22 can all be single ported. The at least one dataregister of the foreground memory 22 thus is a very wide registercomprising a plurality of second memory units which are each capable ofcontaining one word. This means that the information potentially presentin a data register of the foreground memory 22 comprises a plurality ofwords and is thus more than what a functional unit 24 of thearchitecture can handle. Therefore, selection means such as amultiplexer (not illustrated) are provided in order for the functionalunits 24 to select certain information from the data register of theforeground memory 22. The selection means may subsequently selectdifferent words from the data temporarily stored in the data register ofthe foreground memory 22, under control of a loop buffer 27. By doingso, less read action from the level-1 memory 21 are required, and asreading from memory turns out to be very power hungry, less readingactions result in lower power consumption. The use of the asymmetricinterface of the foreground memory 22 is important to at least someembodiments of the present invention. The asymmetric use of theforeground memory is explained in the example below.

A simple example is provided to illustrate the principle of theasymmetric use of the foreground memory data register (e.g. VWR). Fourwords are assumed in each VWR/ReRAM line organized as follows: [1 2 3 4][5 6 7 8] [ . . . ] and further a word read scheme is assumed in theprocessor with the following schedule: 1 3 4 2 8 5 6 7. Then theline-wide read operations are fully utilized and one can assume that theVWR-ReRAM read based transfer can be performed at ¼ of the processorfrequency. This can be generalized for any number of words (N) per lineof course. However, if one has e.g. the schedule 1 5 6 2 8 3 4 7,obviously mixes of line 1 and 2 are needed. So, unless there aremultiple foreground memory data registers, e.g. VWR instances, in theprocessor, one has to load the lines multiple times. In this example itwould actually be twice more, because both the first and second linedata are required twice. Hence instead of ¼ it is now needed to read athalf the processor frequency. A similar problem is encountered in thecase of multiple accesses to the same word, e.g. in the schedule 1 3 4 28 5 6 4 7 8 9 1 wherein also 6 accesses are needed over 12 processorcycles.

In an aspect of the invention the read periphery and the celldimensioning (of the memory cell in e.g. ReRAM) are optimized to work atspeeds of 1 GHz and above with a very low read energy/access (belowstandard SRAM read energy/access). In particular R_(low) values can beoptimized, for example in a range between 10 kΩ and 400 kΩ, such asbetween 10 kΩ and 100 kΩ, e.g. 20 kΩ, and R_(high) values, for examplein a range between 700 kΩ and 100 MΩ, such as between 800 kΩ and 2 MΩ,e.g. 1 MΩ). Note that R_(low) represents the resistivity value of thelow resistivity state of the memory cell and R_(high) the value of thehigh resistivity state.

Values of 20 kΩ and 1 MΩ are typical low resistive state (LRS) and highresistive state (HRS) resistance values, R_(low) and R_(high), obtainedfrom cell measurements and calibrations. These resistance values are notfully fixed or the optimum. The resistance values for the LRS and HRSessentially depend upon the following:

-   -   The limitations of the cell itself: whether it can show such        variations in resistance values of the two states, the lower        limits and the upper limits of the resistance values etc.    -   The technological limitations: the drive current required for        the read and write operation significantly increases when the        resistance values of the cell are decreased. Since drive current        is proportional to transistor widths, the lower the cell        resistance, the larger the transistor and hence the area. The        lower resistance values, of the LRS state in particular, help in        faster discharge across the bit line and significant reduction        in read delay. Hence area optimizations and trade-offs between        delay and area need to be considered before coming to optimized        resistance values for LRS and HRS respectively.

In an aspect of the invention the write scheme is less optimized forspeed, but is mostly optimized for low write energy/access. It isassumed that 8 to 16 cycles (8-16 ns) is sufficient (related to speed),because of the architectural innovation explained further in thisdescription.

A set of solutions is now provided for the use of embedded non-volatilememories as a replacement for SRAM forming the level-1 cache.

I. Circuitry Solution for Non-Volatile Memories (e.g. ReRAM)

In a particular embodiment of the present invention a ReRAM cell is usedas a memory cell in the level-1 cache. The memory cell is not limited toReRAM, but also other non-volatile memory types may be used for whichthe read operation is fast enough and which has an acceptable energy peraccess (see above for typical requirements). The memory cell comprises amemory element, e.g. an active resistive element in case of ReRAM, and aswitch element for controlling the memory element. As a particularimplementation, a 1R1T (1 resistor, 1 transistor) solution may be used.Here, the access transistor (tuned to drive required voltages) switchesthe resistive element.

A sense amplifier (SA) is a circuit that amplifies a small input signalto a full level output. Due to the large array of ReRAM cells, theresulting signal, in the event of a read operation, has a low voltageswing. The most important sense amplifiers are the read senseamplifiers, which amplify the small voltage swing on the data linestowards the memory output. The main goal of the read sense amplifiers isto speed up the read operation. For particular classes of read senseamplifiers the use of a very low swing signal on these data lines isenabled. A smaller required swing has two advantages: it reduces theenergy consumed in the charging and discharging of large capacitors andit reduces the time the cell or read buffer needs to develop this swing.

In order to address the memory cells of the embedded non-volatile memoryarray, word lines and bit lines are provided. Bit line energy and delayis directly related to the bit line structure. Typically, a plurality ofmemory cells, e.g. 1024 cells, connect to a long bit line with a largecapacitance. Before a read operation starts, the bit line may bepre-charged high.

In accordance with embodiments of the present invention, the bit linescheme can be optimized for data-parallel read access, so that the cellaccess (transistor sizing and R_(low)/R_(high) choice) and the senseamplifier globally meet an access speed (even in worst-case conditions)of 1 or 2 processor cycles (e.g. 1 ns or below). In this optimizationthe ratio of the number of cells per local bit line to the number oflocal blocks is an optimization parameter due to the separation of localand global bit lines.

In an embodiment of the invention, the divided bit line architecture asdefined in ‘Low power SRAM Design using Hierarchical Divided Bit-LineApproach’ (Karandikar and K. K. Parhi, Int'l Conf. on Computer Design:VLSI in Computers and Processors (ICCD), pp. 82-88, 1998) is deployed inthe ReRAM circuitry. In the divided bit line scheme, the bit line isdivided into local bit lines connected to a global bit line via passtransistors. Hence, the effective bit line capacitance decreasesdepending on the number of local partitions. This in turn reduces the RCdelay and also the energy consumption across the bit line. Both thelocal bit lines LBL and the global bit line GBL are precharged highinitially and then the pass transistors are activated along with theword line activation. The bit line discharge across the local bit linetranslates to the discharge across the global bit line. The divided bitline architecture defines a bit line and a complementary bit line as setout in the Karandikar paper. In one embodiment divided bit linearchitecture is an essential feature for the circuit, as thearchitecture strongly enables achieving the required speed and energyspecs.

In accordance with embodiments of the present invention, the structureof the divided bit line architecture has been modified whereby therespective complementary bit line has been omitted. Only one bit line isavailable. An illustration of a divided bit line architecture withnon-complementary hierarchical bit lines is shown in FIG. 3. The mostimportant differences with the conventional SRAM approach are thefollowing:

-   -   Due to the smaller cell area, the periphery area is more        dominant.    -   Concerning the word line half-selected (WLHS) cells, the SRAM        architecture always discharges the bit lines, which causes        energy consumption. When a ReRAM architecture is adopted, there        is no discharge. Hence, a wide multiplexer can be used, the        sense amplifier can be shared among more cells and better sense        amplification can be achieved.    -   Bit line precharging for a read operation is performed at a        lower voltage    -   The read current is non-linear    -   A single-ended bit line can be used (similar to a 8T SRAM cell)

In an embodiment of the present invention a sense amplifier as describedin “Variability-aware design of low power SRAM memories” (S. Cosemans,PhD Thesis, modified version 2010-10-11, Chapters 4 and 5) may bedeployed as sense amplifier in the ReRAM circuitry. The sense amplifiermay be tuned (width of transistors, the length is kept constant) for usewithin the ReRAM context. Tuneable sense amplifier parameters includesense amplifier transistor widths and wire widths (global bit line,local bit line, global word line, local word line).

The invention also relates to a method for configuring the parameters ofthe ReRAM device periphery. The parameters include sense amplifiertransistor widths, access and precharge transistor widths, decoder,selector and driver networks transistor widths and wire widths (globalbit line, local bit line, global word line, local word line etc. . . .). The parameters of the ReRAM device periphery are defined using anoptimization technique. The electrical model of the ReRAM cell usedconsists of several different types of circuit components. The freelychosen parameters of these components have, dependent on the technology,different influences on the circuit characteristics (energy, delay,area).

An important issue to deal with relates to the reduced voltage V_(GS)during a set (from a High RS memory cell state to Low RS memory cellstate). The transistor operates almost in sub-threshold. The maximum setcurrent is below 10 μA. The V_(GS) is sensitive to threshold variations.It is impossible to reach V_(trigger,set). In order to solve thisproblem an additional PMOS transistor is added, so that a 2T1R cell isobtained. FIG. 4 provides an illustration. This indeed enables a largercurrent I_(set), and allows a faster read operation. This benefit comesat the price of an area penalty. Note that one is still limited toV_(DD).

An adapted gradient descent optimization technique has been employed todefine ideal parameters for periphery in the circuit. But also othernon-local optimization methods may be used that can handle non-linearityand discrete search spaces.

II. Semi-Random Write Access of the ReRAM

In order to use the ReRAM as a suitable replacement device for an SRAM,an overall write access of 8 to 16 ns should be attained. This can beachieved with proper dimensioning of R_(low) and by trading off withretention. For a 32 Kb memory R_(low) is expected to be about 20 kΩ (seeexplanation above). This means that for a 1V supply 50 μA is neededwhich means 250 fJ/bit (1V*50 μA=50 μW; 5 ns*50 μW=250 fJ/bit) if onecan limit the actual resistive loading to 5 ns. That is a veryacceptable energy, especially because the amount of line writes can belimited significantly with the architecture (see the exampleillustrating the asymmetric use of the foreground memory data registerabove). With a higher R_(low), i.e. a resistivity value of the lowresistivity state of the ReRAM cells higher than 20 kΩ, potentially theenergy can be reduced further, but then one is faced with strongtrade-offs with the read speed, which is quite critical.

From the architecture and mapping point of view, the 8 to 16 ns cyclewrite access is tolerated if a very regular write scheme (see theexample illustrating the asymmetric use of the foreground memory dataregister given above) is imposed where the foreground memory solution,e.g. VWR, is (nearly) fully exploitable (e.g. VWR bandwidth is not yetfully exploited if 6 data-paths with a width of 128 bit are using a 1024bit wide memory port). In practice that means the usage of e.g. a 128bit data path width (width-3 in FIG. 2) and a 1024 bit wideReRAM/foreground memory port (width-2 in FIG. 2), or thus a widerReRAM/foreground memory port width (width-2) than the data path width(width-3). The width-3, e.g. 128 bit, data path word enables a largeamount of data-parallel subwords of, for example, 8, 16 or 32 bits (oreven more flexibility with a soft-SIMD solution). In the example given,there is a ratio of 8 between the width of the ReRAM/foreground memoryport and the data path width, so a ReRAM-VWR write is required every 8processor cycles. For a ratio of 16 between both the data parallelismhas to be reduced (e.g. 64 bit data path) and, hence, also the overallplatform performance and energy efficiency. This leads to less desirabletrade-off points, but is still feasible in many markets.

The mapping of the read/write indexing scheme in the processorarchitecture has to be adapted in accordance with embodiments of thepresent invention, to a very asymmetric one where all the irregularityin the algorithm R/W behavior is pushed on the read side and the writesize is kept fully regular (see the example illustrating the asymmetricuse of the foreground memory data register above). That is achievable inany practical signal processing algorithm that would profit from mappingon a data-parallel processor. The mapping can be adapted in the programcode executed on the architecture or in the hardware periphery of theembedded non-volatile memory. This is further elaborated below takingthe example of program code adaptation.

In an aspect of the present invention a method is provided forconverting, during a compile time phase, application code into executioncode suitable for execution on an architecture 20 according toembodiments of the present invention.

Such architecture 20 at least comprises a microprocessor unit and afirst memory unit 21. The microprocessor unit comprises at least onefunctional unit 24 and at least one data register 22, the at least onefunctional unit 24 and the at least one data register 22 being linked toa data bus which is internal to the microprocessor unit. The dataregister 22 is a wide register comprising a plurality of second memoryunits which are capable to each contain one word. The wide register isadapted so that the second memory units are simultaneously accessible bythe first memory unit and so that at least part of the second memoryunits are separately accessible by the functional unit 24. The methodaccording to an embodiment of the aspect of the present inventioncomprises:

-   -   obtaining application code, the application code including        memory access operations comprising read operations and write        operations,    -   converting the application code such that the memory access        operations are translated into irregular and regular memory        operations; the read operations comprising simultaneously        reading of a plurality of words from the first memory unit 21        and simultaneously writing the plurality of words into the data        register of the foreground memory 22, and the write operations        comprising simultaneously reading a plurality of words from the        data register of the foreground memory 22 and simultaneously        writing the plurality of words into the first memory unit 21,    -   mapping the regular and irregular memory operations towards read        operations and write operations whereby the irregular operations        are dominated by read operations and the regular operations are        dominated by write operations.

The level of domination of the read and write operations is determinedby comparing the system performance with the performance of an SRAMbased system (taking into account the speed requirement of theapplication). The system performance has to be (significantly) similaror better than an SRAM based system. The level of domination of read andwrite operations is dependent on this (e.g. if the performance of thesystem is not comparable to an SRAM based design, the level ofdomination of read and write operations should be changed).

Regular memory operations involve only data access situated in nestedloops without pre-amble and post-amble (only data access in inner loop).The regular memory operations are not dependent on the data valuesthemselves.

Additionally, a further transformation operation can be performed tomove irregular write operations to a read operation (see the example toillustrate the asymmetric use of the foreground memory data registergiven above). A few additional examples are given to illustrate theprinciples of this conversion. First one write/read pair is assumed witha same length, i.e. a same number of accesses. The write operation isassumed irregular: 2 1 5 3 7 8 4 6 and the corresponding read is fullyregular, e.g. 1 2 3 4 5 6 7 8. Then the write access order can bechanged to the fully regular sequence 1 2 3 4 5 6 7 8 while convertingthe read sequence to 2 1 5 3 7 8 4 6. In a less trivial case a readsequence is considered that is mostly regular and has a longer length,e.g. 1 2 3 4 1 2 5 6 7 8. In that case the write sequence is againconverted to 1 2 3 4 5 6 7 8 and the new read sequence becomes 2 1 5 3 21 7 8 4 6. In the most general case there is more than one readoperation corresponding to a single write operation and in that case theabove principle is applied to each write/read pair separately, which inpractice is always possible.

The conversion of application code in this way is done to transfer theirregularity of the algorithm mostly to the read operation side to keepthe write operations mostly or even fully regular.

Given the high speed and energy efficiency of a read operation (1 cycleat 4 fJ if needed) the potentially highly irregular read operations donot pose a problem.

In an aspect of the invention the foreground memory solution, e.g. VWRdescribed in U.S. Pat. No. 7,694,084, is deployed in the ReRAMcircuitry. As all the irregularity of the algorithm R/W behavior ispushed on the read side and the write side is kept fully regular asdescribed above, the asymmetric interface of the foreground memorysolution, e.g. VWR, is exploited to accommodate the irregular readoperations. In the specific case of ReRAM, this is particularlyinteresting for the read access as explained above.

If there are multiple write operations which are only partially usingthe width of the wide memory, another conversion can be performed,wherein the partial write operations are merged, potentially at the costof more read operations. Due to the very low read energy per access (seetable) and the relatively large write energy/access this conversion isnearly always beneficial. For example, in case eight words can bewritten together in a 512 bit access, one can merge the write sequence 12 3 4 X X X X with the sequence 5 6 7 8 X X X X by moving the 5 6 7 8words to another position in the overall data layout, ending up with thefinal layout 1 2 3 4 5 6 7 8. This can be generalized in astraightforward way to other partial write operations.

Semi-Random Read Cycle

The cell and periphery combination (taking into account the optimizationparameters for the memory array) allows “semi-random” read access(potentially different line read every processor cycle) for theReRAM-VWR communication. In practice an excessive number of foregroundmemory data register (e.g. VWR) loads is avoided by optimizing the datalocality in the mapping, but in some cases this very fast access isunavoidable to meet the real-time requirements.

The ReRAM periphery allows achieving maximal frequencies that even goabove 1 GHz if necessary. So, even very irregular schedules with a 1:1ratio (lines to be loaded every processor cycle) can be accommodated.Note that in practice such worst-case situations will not happen oftenbecause the schedules in practice will be partly regular, but with aconventional arch/mapping combination this cannot be avoided. So thearchitecture has to be designed upfront to deal with such a worst-case.Due to the difficulty of the write access (see below) one explicitlyopts for supporting the worst-case at the read access side of the ReRAM.The worst case is supported by achieving the speed requirements (e.g. 1or 2 processor cycles).

III. Solution for Scalar Operations

Besides data-parallel operations, any application may also have scalaroperations. Regarding scalar operations, the solution concerningasymmetric use of the foreground memory data registers, e.g. VWR, cannotbe applied because the regular data access for the write mode cannot beensured here as these operations do not belong to only regularly nestedinner loops (see definition above).

In an embodiment of the invention a hybrid memory architecture isproposed. One part of the memory is SRAM, the other part is anon-volatile memory part. For the scalar access purpose, theconventional SRAM is used. The SRAM is not so critical for energybecause the total access count is very low for this irregular scalarpart, hence leakage will be minimal. The substrate (e.g. silicon) areafor this SRAM is minimal because of the low total amount of scalars inany realistic target application. Therefore only a small SRAM is needed.The use of a small SRAM for scalar operations also removes any delaybottleneck.

Even for very scaled technologies (below 32 nm technology) one can livewith cells and periphery that are not pushed at all toward smalldevices, given the non-critical delay, area and energy properties.Hence, leakage and reliability issues can be prevented by circuitoverdimensioning.

IV. Use of Loop Buffers in the Instruction or Configuration MemoryOrganization, Exploiting the ReRAM Design

The above solution can also be reused for the L1I instruction memorylayer 28 (FIG. 2). For the instruction memory layer a similar problemexists as for L1D 21, though less severe (because there are no writeoperations from the processor—code is written once and the code is beingread by the processor).

In accordance with an embodiment of the present invention, a distributedLoop Buffer (LB) organization as disclosed in U.S. Patent PublicationNo. 2008/0294882 may be deployed in the ReRAM architecture. In this casethe wide word access from the L1I 28 to the LB layer is fully enabledand the dynamic energy bottleneck is gone from the L1I 28 itself. Theleakage energy overhead in the cell array is removed by substituting theconventional SRAM for the level-1 instruction cache again with anon-volatile memory (e.g. ReRAM) solution. In the L1I periphery theleakage reduction can be ensured by adding non-minimal device sizes(leakage depends on W/L ratio of the device—smaller devices tend to leakmore than larger device) which are affordable due to the small circuitoverhead there and due to the very non-critical write requirements forthe L1I layer (once the access of the proposed RRAM implementation isfully compatible). An illustration of the use of a loop buffer forinstruction memory is provided in FIG. 5.

Embedded Instruction Memory Organization for a VLIW Processor (SingleCore or Multicore)

In a conventional instruction memory organization a Base SRAMInstruction Memory Organization (BS-IMO) is applied. Both the L1 memoryand the L0 loop buffer are SRAM based. In the proposed solution the loopbuffer is a small instruction buffer designed to hold frequentlyexecuted program loops. Typically, in the first pass of a loopinstructions from the higher levels are fetched and copied to the loopbuffer. The instructions are then used in subsequent passes. Whenexecuting from the loop buffer, the L1 memory can remain idle, which hasa positive impact on the system power consumption. The loop buffer canbe implemented as a clustered loop buffer organization optimized for lowenergy Very Large Instruction Word (VLIW) Embedded Processors or, aspreviously mentioned, as a distributed loop buffer optimized formulti-threading. Alternatively, the loop buffer can be a simple variantof a zero overhead loop buffer. The loop dominated nature of the codesfor the envisaged application and the resulting read-write asymmetryleads to significantly more usage of the loop buffer. This is certainlyadvantageous from both the energy and performance point of view, sincethe loop buffer is a much smaller memory (lower energy consumption) andcloser to the data path than the L1 memory.

A further system level exploration is now presented of embedded NVM (forinstance Resistive RAM) based hybrid Instruction Memory Organization.

While the read-write asymmetry does alleviate the problems associatedwith the ReRAM write access to some extent, it would still not be afeasible alternative. The write energy consumption becomes manageable asa result of smaller number of write accesses compared to read accesses(read/write asymmetry) and acceptable ReRAM cell write energies comparedto SRAM cell write energies. However, the penalty due to the ReRAM writelatency still results in performance penalties. A ReRAM write latency of8 to 16 cycles is assumed compared to the ReRAM read latency of 1 cycle.One possible way to limit the write access problems is by the use ofwide word access schemes. Utilizing wide word access schemes formemories has a number of advantages:

-   -   Writing the wide word into the L0 loop buffer reduces the        average write energy consumption per bit    -   Wide word write also reduces the effective total time required        to write the frequently executed loops into the loop buffer    -   Since, the number of write cycles required to transfer the data        to be executed are limited, ReRAM based memories are more        resilient to lifetime degradation    -   The wide word read access for ReRAM is much more efficient per        bit as compared to that of SRAM because the cumulative        capacitive load of the SRAM cells is not present.        Hence, a wide word access scheme for the L0 loop buffer is        applied.

Reading data from the L1 memory in case of non-loop code is still highlyenergy consuming simply due to the size of the memory. Hence, a VeryWide Register (VWR) is used for low energy access of non-loop code andalso to facilitate the data transfer from the L1 memory to the L0 loopbuffer. A VWR is a register file architecture, which has single portedcells and asymmetric interfaces (see FIG. 6).

The interface of the VWR, in this case, is wide towards the L1 memoryand narrower towards the loop buffer, as discussed previously. The VWRis always kept as wide as the line size of the background memory (L1 inthe current organization) and complete lines are read into it. The VWRhas its own multiplexer (MUX), and the controls of the MUX that decidethe cell to be accessed can be derived from the program counter itself.The modified instruction memory architecture, Modified ReRAM InstructionMemory Organization (MR-IMO), is shown in FIG. 7. Both the L1 memory andthe L0 loop buffer are ReRAM based wide word access memories (32instruction word access for L1 memory and 8 instruction word access forL0 loop buffer). In the proposed architecture each VWR cell size has acapacity of 8 instructions, which is the word-size/output of the VWR andequal to the line size of the L0 loop buffer. The VWR has a single cycleaccess similar to register files. Per write cycle (L0 line size) 8instructions are written into loop buffer to minimize the write energyconsumption and the performance penalty due to ReRAM write latency.

The example given in FIG. 8 will help illustrating the data flow in abetter manner. The figure is simply a breakdown of the CWT-optimizedinstruction flow. The four main functions (MAIN, QRSDet3C, lmsc andrpeaksearch) that make up the instruction code are shown along with theinstruction code sequences they correspond to. The loop bodies arerepresented by the dashed boxes. The loop body size is indicated besideit (towards the left side) by means of loop ‘start’ and loop ‘end’instructions (e.g. 192:244). The loops are initiated either by the ‘do’or the ‘doi’ instructions. The instruction flow and jumps are specifiedby means of arrows.

The L1 line that contains the instruction to be accessed is alwaystransferred to the VWR in case of non-loop codes in the first pass.Subsequent accesses are from the VWR till the program counter encountersan instruction not present in the VWR. The corresponding L1 line is thentransferred to the VWR and the cycle continues. The VWR is completelyfilled in each of its write cycle. Multiplexer network 1 extracts asingle instruction from wide word written into the VWR towards theprocessor.

Once the ‘loop flags’ (a two bit register that indicates whether theloop has been activated and also the depth of the loops) are activated,the entire contents of the VWR cell (L0 line size) that contains a loopinstruction in question is copied into the loop buffer. The write cycleinto the ReRAM loop buffer takes place over 8 cycles as mentionedbefore. Due to the presence of a smart multiplexer network that selectsa single instruction from the 8 instructions being written into the loopbuffer, the data can be read from the VWR while it is being written intothe loop buffer. However, the processor has to be stalled when the nextinstruction to be executed from the code is not present in the VWR cellsegment from which the 8 instructions are being transferred into theReRAM loop buffer, which leads to a performance penalty. Multiplexernetwork 2 extracts a single instruction from wide word written into theloop buffer from the VWR towards the processor. Multiplexer network 3extracts a single instruction from wide word read from the loop buffertowards the processor. As can be seen from FIG. 8, there are functioncalls present within the loop body that call instructions lying outsidethe loop body. Although, technically, the loop flags are still activeand it is a part of a particular loop execution sequence, theseinstructions lying outside the loop body are not copied into the loopbuffer. Due to the ReRAM write latency, instruction codes having shortloop bodies and those that are accessed less frequently can result invery performance penalties. This can be compensated for in a number ofways. One of the more simple ways to achieve this would be by readingthe data from the L1 memory when the data is not present in the VWR cellsegment being written into the loop buffer. Since always a wide word isread, this approach can lead to a significant increase in energyconsumption.

Another possible option that can be explored is reading of data from theVWR itself during penalty cycles of the loop buffer write. Since addingan extra read port on the VWR will significantly increase the energyconsumption, a small single line register (L0 line register) isintroduced inbetween the VWR and the loop buffer, Performance OptimizedReRAM Instruction Memory Organization (POR-IMO), FIG. 9. This is a moreenergy efficient mode as compared to the previous option, but it alsocomes at the cost of extra hardware.

The performance penalty can also be minimized without making anyarchitectural changes if it is selectively omitted writing loops basedon the loop body size and frequency of access (loop iterations) into theloop buffer. However, this may adversely affect the energy consumptiondepending upon the instruction code. Highly irregular codes will mostlikely show a bigger increase in energy consumption if the performancepenalty is reduced in the said manner. The wide word being read from theL0 loop buffer every time it is accessed consumes more energy than theregular (smaller selective word) access scenario. This is a target forfurther energy optimization. A smaller VWR (that extracts a singleinstruction from the L0 line size) is used to exploit the mostly-regularaccess from the L0 loop buffer and reduce energy consumption even more.FIG. 10 illustrates this modification to the POR-IMO, energy andperformance optimized ReRAM Instruction Memory Organization (EPOR-IMO).

For the ReRAM a 1(T)ransistor-1(R)esistor model cell stack may be used.The Low Resistive State (LRS) and High Resistive State (HRS) resistancevalues of the ReRAM cell obtained from cell measurements andcalibrations were 20 kΩ and 1 MΩ respectively. These resistance valuesare not in any way fixed and are decided depending upon a number offactors like; the limitations of the cell itself (whether it can showsuch variations in the resistance values of the two states, and thelower limits and upper limits of the resistance values) and thetechnological limitations (the drive current required for the read andwrite operation significantly increases when the resistance values ofthe cell is decreased. Since drive current is proportional to transistorwidths, the lower the cell resistance, the larger the transistor andhence the area. The lower resistance values of the LRS state help infaster discharge across the bit line).

The wide word access ReRAM array structure is given in FIG. 11. In theReRAM design used for both the L1-memory and L0 loop buffer, the outputis read as a single wide word across the entire length of the word line.Two first-level decoders are used to decode z address bits into two setsof one-hot output wires. The Block Row Decoder (BRD) decodes x addressbits into a Block Row Select signals (BRS) signals, and the Within BlockDecoder (WIBD) decodes the remaining y address bits into b Within BlockSignals (WIBS), wherebyx+y=zanda*b=2^(x)=rowsThese within block signals combine with BRSi to generate the word line.Embedded Configuration Memory Organization for a Coarse Grain ArrayProcessor (Single Core or Multicore)

Similar to the Instruction Memory Organization (IMO) in many of thecommercially available embedded systems today, a typical CGA controlUnit as shown in FIG. 12 contains two levels: the configuration memory(L1) and the configuration cache (L0). The execution of the CGA iscontrolled by this control unit and a configurable processor corecontains as many CGA control units as there are CGA partitions. Theconfiguration memory is an ultra-wide memory and larger than theconfiguration cache (about 8 to 16 times), which is closer to thedata-path. The cache implementation is meant to reduce the energyconsumption of the control unit. This configuration memory cacheeffectively works as a traditional loop buffer, which is used to holdfrequently executed program loops. This is fairly common in processorsmeant for loop-dominated applications (more hardware controlled flavorsof the loop buffer are the loop cache or the filter cache). Typically,in the first pass of a loop, configuration words from the higher levelsare fetched and copied to the configuration cache, and theseconfiguration words are then used in subsequent passes. When executingfrom the configuration cache, the configuration memory can remain idle,which has a positive impact on the system power consumption. Theconfiguration memory is SRAM based, whereas the configuration cache isan array of n D-latch registers and 2 flip-flop registers, where ndenotes CGA cache depth.

As already mentioned, the integration of ReRAM based memories into thetraditional memory hierarchy poses new architectural challenges. Despitethe high-speed random access during reads, the write access of ReRAMtechnology faces a number of problems namely long latency, high energyand limited endurance, that fail to make simple ReRAM based memoryarchitectures feasible. In the context of CGRAs, high write latenciesrequire careful inspection of the different trade-offs. For example, dueto the data parallel nature, loop counts may become smaller thusaggravating the latency problem if ReRAM modules are positioned in thewrong place.

FIG. 12 shows a conventional SRAM based architecture. The loop dominatednature of the codes for the target applications leads to more readaccesses as compared to write accesses. This read-write asymmetry leadsto significantly more configuration cache usage. This is certainlyadvantageous considering energy consumption (and also from a performancepoint of view, since the cache here is much closer to the data-path thanthe configuration memory). The low energy read access of the ReRAM andthe application-wise read-write asymmetry makes the usage of ReRAMalternatives highly preferable for embedded systems running the targetapplications. Other than the obvious advantages of lower leakage andarea, the compatibility of ReRAM with logic technology also makes itsuitable to replace SRAM at such low levels. Below several embodimentsof a configuration memory organization are presented wherein the SRAMbased memory system is substituted by a ReRAM based counterpart. Giventhe high sensitivity of the configuration cache (loop buffer) to theincreased write latencies, the L0 layer is carefully explored in orderto attain energy savings without performance loss. A ReRAM based loopbuffer with specific architectural extensions is considered as areplacement to the baseline configuration cache.

Given the high write/read latency ratio (write latency is 8 times higherthan read), it can no longer be assumed that the configuration words arecopied from the L1 layer to the loop buffer during the first pass of aloop without performance penalty. Thus, configuration words would needto be repeatedly read from the L1 configuration memory while writinginto the loop buffer. This still is highly energy consuming due to thememory size.

Hence, a Very Wide Register (VWR) is introduced for low energy accessand also to facilitate the data transfer from the configuration memoryto the L0 loop buffer. A VWR is a register file architecture, which hassingle ported cells and asymmetric interfaces (FIG. 13). The interfaceof the VWR, in this case, is wide towards the configuration memory andnarrower towards the loop buffer. This asymmetric register fileorganization, together with its interface to the wide memory, achieves asignificantly higher energy efficiency than conventional organizations.The VWR is always kept as wide as the line size of the background memory(configuration memory in the current organization), and complete linesare read into it. The VWR has its own multiplexer (MUX) and the controlsof the MUX that decide the cell to be accessed can be derived from theprogram counter itself.

An embodiment of a configuration memory organization according to thisinvention is shown in FIG. 14. Both the configuration memory and theloop buffer are ReRAM based wide word access memories: 8 parallelconfiguration word access for L1 memory and 4 configuration word accessfor L0 loop buffer. In the proposed architecture, each VWR cell size hasa capacity of 4 configuration words, which is the word-size/output ofthe VWR and equal to the line size of the L0 loop buffer. The VWR has asingle cycle access similar to register files. We write 4 configurationwords per write cycle (L0 line size) into loop buffer to minimize thewrite energy consumption and the performance penalty due to ReRAM writelatency.

The configuration line that contains the configuration words to beaccessed is always transferred to the VWR in the first pass. Insubsequent accesses, data is fetched from the VWR till the loop bufferwrite cycle is completed. The data is then fetched from the loop bufferuntil the next loop is encountered. The VWR is completely filled in eachof its write cycle. Multiplexer network 1 extracts a singleconfiguration word from wide word written into the VWR towards theprocessor. Once the loop flags are activated, the entire contents of theVWR cell (L0 line size) containing the 4 loop configuration words inquestion is copied into the loop buffer.

The write cycle into the ReRAM loop buffer takes place over 8 cycles asmentioned before. Due to the presence of a smart multiplexer networkthat selects a single configuration word from the 4 configuration wordsbeing written into the loop buffer, the data can be read from the VWRwhile it is being written into the loop-buffer. Multiplexer network 2extracts a single configuration word from wide word written into theloop buffer from the VWR towards the processor. Multiplexer network 3extracts a single configuration word from wide word read from the loopbuffer towards the processor.

In one embodiment a memory organization with reduced word access size isimplemented, wherein the configuration memory line is 4 configurationwords wide and the loop buffer 2 configuration words wide. Note that thememories in this configuration are still considerably wide. So, thisnarrower interface makes every single access less energy consuming eventhough the energy per bit increases. If the extra-wide interface isefficiently exploited (i.e. if the number of accesses to the largeconfiguration memory can be reduced by means of the VWR), it is stilladvisable to opt for wider interfaces as much as possible.

Addressing leads to a single cycle delay while the VWR is being updatedand the data is to be read from the configuration memory. Due to thelarge configuration word size, only a few configuration words can beheld in the VWR and it has to be updated frequently if the number ofloop iterations are small. Hence, whenever the loop size spans over thelength of the configuration memory line size (or VWR size), it is easierto simply read the second line from the configuration memory itself.This approach would however be less energy efficient due to asignificant number of reads from the larger configuration memory. Abypass 4 from the configuration memory to the loop buffer wouldin-effect reduce the need for updating the VWR frequently and reduce thenumber of read accesses to the configuration memory. This alternative tothe memory organization is illustrated in FIG. 15.

Another alternative to the aforementioned problem is to introduce adelay cycle internally (without stalling the processor). Now the VWR canbe updated every time the loop size extends over the configurationmemory line size.

Taking into consideration, the initial D-latch and Flip-Flop basedimplementation of the configuration cache, it is hard to imagine a ReRAMbased loop buffer substitute achieve lower energy consumption (even atextremely lower read access energies). Hence, a further alternative tothe memory organization is proposed, wherein the loop buffer isabandoned and another VWR is introduced (FIG. 16). Now, assuming thatthe number of configuration words in any loop body does not extend overthe length of 2 VWRs (16 configuration words), the energy consumption inthis case is expected to be the least. This can be attributed to theextremely low energy read access of the VWR and the favorable readaccess energy of the wide word ReRAM as compared to SRAM. There is anobvious trade-off here with the length of the loop bodies, but in theapplication domain and for the target platform considered (CGRAs) underconsideration, 16 words is a large enough assumption for most loopnests. Moreover, code transformations are always at hand to limit thebody size when required.

While the invention has been illustrated and described in detail in thedrawings and foregoing description, such illustration and descriptionare to be considered illustrative or exemplary and not restrictive. Theforegoing description details certain embodiments of the invention. Itwill be appreciated, however, that no matter how detailed the foregoingappears in text, the invention may be practiced in many ways. Theinvention is not limited to the disclosed embodiments.

Other variations to the disclosed embodiments can be understood andeffected by those skilled in the art in practicing the claimedinvention, from a study of the drawings, the disclosure and the appendedclaims. In the claims, the word “comprising” does not exclude otherelements or steps, and the indefinite article “a” or “an” does notexclude a plurality. A single processor or other unit may fulfil thefunctions of several items recited in the claims. The mere fact thatcertain measures are recited in mutually different dependent claims doesnot indicate that a combination of these measures cannot be used toadvantage. A computer program may be stored/distributed on a suitablemedium, such as an optical storage medium or a solid-state mediumsupplied together with or as part of other hardware, but may also bedistributed in other forms, such as via the Internet or other wired orwireless telecommunication systems. Any reference signs in the claimsshould not be construed as limiting the scope.

What is claimed is:
 1. A system comprising: a microcomputer comprising amicroprocessor unit and a first memory unit, the microprocessor unitcomprising at least one functional unit having memory accesses of singlewords and at least one register, wherein the at least one register is awide register comprising a plurality of second memory units which arecapable to each contain one word, the wide register being adapted sothat the plurality of second memory units are simultaneously accessibleby the first memory unit, and at least part of the plurality of secondmemory units are separately accessible by the at least one functionalunit, and wherein the first memory unit is an embedded non-volatilememory unit; and a compiler for converting application code intoexecution code adapted for execution on the microcomputer, the compilercomprising: means for receiving application code, the application codeincluding memory access operations; means for converting the applicationcode such that the memory access operations are translated intoirregular and regular memory access patterns; read operations comprisingsimultaneously reading a plurality of words from the first memory unitand simultaneously writing the plurality of words into the at least oneregister, the at least one register having an asymmetric interfacewherein the irregular memory access patterns are dominated by readoperations; and write operations comprising simultaneously reading aplurality of words from the at least one register and simultaneouslywriting the plurality of words into the first memory unit, wherein theregular memory access patterns are dominated by write operations,wherein a reorganized mapping of array indices for the regular andirregular memory access patterns towards read operations and writeoperations is performed, and wherein irregular indexing operations aredominating in the read operations and regular indexing operations aredominating in the write operations.
 2. The system as in claim 1, whereinthe first memory unit is a data memory, and wherein the at least oneregister and the at least one functional unit are linked to a data businternal to the microprocessor unit.
 3. The system as in claim 1,wherein the first memory unit is an L1 instruction memory.
 4. The systemas in claim 3, further comprising a loop buffer between the L1instruction memory and the at least one functional unit.
 5. The systemas in claim 4, wherein the loop buffer is an embedded non-volatilememory unit.
 6. The system as in claim 3, further comprising a loopbuffer being an embedded non-volatile memory unit and means formultiplexing arranged for deciding on which memory unit to access. 7.The system as in claim 4, further comprising a single line registerbetween the wide register and the loop buffer.
 8. The system as in claim4, comprising a further wide register adapted for exploiting access fromthe loop buffer toward the at least one functional unit.
 9. The systemas in claim 1, wherein the first memory unit is an L1 configurationmemory.
 10. The system as in claim 9, further comprising a loop bufferbeing an embedded non-volatile memory unit.
 11. The system as in claim10, wherein the wide register comprises means for multiplexing arrangedfor deciding on which memory unit to access.
 12. The system as in claim10, further comprising a bypass from the L1 configuration memory to theloop buffer.
 13. The system as in claim 10, comprising a further wideregister adapted for exploiting access from the loop buffer toward theat least one functional unit.
 14. The system as in claim 1, wherein thefirst memory unit has a divided bit line architecture withnon-complementary bit lines.
 15. The system as in claim 14, wherein thefirst memory unit comprises a sense amplifier connected to a first bitline and arranged for providing an amplified voltage swing from thefirst bit line to a second bit line, the second bit line connected tothe plurality of second memory units.
 16. The system as in claim 1,wherein the first memory unit is a resistive RAM type memory or a spintransfer torque RAM type.
 17. The system as in claim 16, wherein thefirst memory unit is resistive RAM type memory with one resistor and twotransistors.
 18. The system as in claim 1, wherein the first memory unitis a hybrid memory structure, further comprising a SRAM memory for usein scalar operations and accesses.
 19. The system as in claim 1, whereinthe compiler further comprises means for performing a transformationoperation to move irregular write operations to a read operation.